High Rectifying Organic Device Based P3HT Molecule

Authors

  • S.E. Meftah Physics Faculty
  • M. Benhaliliba Physics Faculty
  • M.Kaleli Innovative Technologies Application and Research Center

Keywords:

P3HT; Ultrasonic Spray Pyrolysis; MSP hetero-junction Thermionic Emission; Conduction mechanism

Abstract

In this study, organic material P3HT has grown via the Spray Pyrolysis technique on p-Si and the Metal/ Semiconductor /Polymer hetero-junction. The electrical measurements of Al/p-Si/P3HT/Ag are realized in the dark and at room temperature. The well-known parameters of the MSP type SBDs such asbarrier height (ΦB), ideality factor (n), series resistance (Rs),are obtained via Current-Voltage (I–V) plot based on Thermionic Emission (TE) theory. The conduction mechanism of the MSP hetero-junction exhibits two different behaviors with two distinct regions on the plot.

Author Biographies

S.E. Meftah, Physics Faculty

Physics Faculty, Oran University of Sciences and Technology USTO-MB, BP1505 31130, Oran, Algeria.

Film Device Fabrication-Characterization and Application FDFCA Research Group USTO 31130, Oran, Algeria.

M. Benhaliliba, Physics Faculty

Physics Faculty, Oran University of Sciences and Technology USTO-MB, BP1505 31130, Oran, Algeria.

Film Device Fabrication-Characterization and Application FDFCA Research Group USTO 31130, Oran, Algeria.

M.Kaleli, Innovative Technologies Application and Research Center

Innovative Technologies Application and Research Center, Energy Technologies Research Unit Laboratory, Department of Physics, Faculty of Arts and Sciences, SuleymanDemirel University, 32260 Isparta, Turkey.

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Published

01/21/2021

Issue

Vol. 5 No. 2 (2021): Volume 5 Issue 2

Section

Articles