High Rectifying Organic Device Based P3HT Molecule

Authors

  • S.E. Meftah Physics Faculty, Oran University of Sciences and Technology USTO-MB, BP1505 31130, Oran, Algeria. Film Device Fabrication-Characterization and Application FDFCA Research Group USTO 31130, Oran, Algeria.
  • M. Benhaliliba Physics Faculty, Oran University of Sciences and Technology USTO-MB, BP1505 31130, Oran, Algeria. Film Device Fabrication-Characterization and Application FDFCA Research Group USTO 31130, Oran, Algeria.
  • M.Kaleli Innovative Technologies Application and Research Center, Energy Technologies Research Unit Laboratory, Department of Physics, Faculty of Arts and Sciences, SuleymanDemirel University, 32260 Isparta, Turkey.

DOI:

https://doi.org/10.58681/ajrt.21050202

Keywords:

P3HT, Ultrasonic Spray Pyrolysis, MSP hetero-junction Thermionic Emission, Conduction mechanism

Abstract

In this study, organic material P3HT has grown via the Spray Pyrolysis technique on p-Si and the Metal/ Semiconductor /Polymer hetero-junction. The electrical measurements of Al/p-Si/P3HT/Ag are realized in the dark and at room temperature. The well-known parameters of the MSP type SBDs such asbarrier height (ΦB), ideality factor (n), series resistance (Rs),are obtained via Current-Voltage (I–V) plot based on Thermionic Emission (TE) theory. The conduction mechanism of the MSP hetero-junction exhibits two different behaviors with two distinct regions on the plot.

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Published

12/22/2021

Issue

Vol. 5 No. 2 (2021): Volume 5 Issue 2

Section

Articles